Theyre doing a finfet and theyre doing the finfet plus version, and were going to be using the finfet plus version. Cadence recently announced its collaboration with tsmc on a customanalog reference flow for 16nm finfet based designs. Radiation hardness of fdsoi and finfet technologies. Neutron ser of finfets is 10x lower than that of planar devices.
For soi finfet electron mobility is higher than hole mobility by 0. Tfit cell level simulations are now available for technologly from 40nm to 16nm. The 16nm finfet process compared to 20nm at tsmc provides about a 20% performance improvement at the same power, or a 40% power savings at the same performance, while the gate density is the. Company profile table of contents overview letter from the chairman company profile 2. This technology provides 2x logic density and 35% speed gain or 55% power reduction over our 28nm hkmg planar technology. Title 44pt title case making the move from 28nm to 16nm. A 16nm finfet cmos technology for mobile soc and computing. Finfet logic implementation has significant advantages over static cmos logic in terms of power consumption. Request pdf a 16nm finfet cmos technology for mobile soc and computing applications for the first time, we present a stateoftheart energyefficient. Cadence virtuoso technology files and associated schematic and layout editing, as well as netlisting are supported. The major process motivation for switching to finfet. Collaborate to innovate finfet design ecosystem challenges and solutions. Tool base consolidates for 16 nm finfet design at tsmc. Fdsoi cmos delayed until 20 finfet delayed to 2015 16nm node intel.
Modeling trapezoidal triple gate finfet, sispad 20. We address the changes and challenges finfets have introduced for circuit design in section 3. Modeling random variability of 16nm bulk finfets victor moroz, qiang lu, and munkang choi september 9, 2010. It shows more dependency of the drain current to vgs in finfet.
Stack height analysis for finfet logic and circuit. Design and implementation author jamil kawa synopsys fellow introduction four years following the introduction of the first generation finfets, the 22nm trigate, and roughly one year after the first production shipments of 14 16nm finfets, 10nm finfet. Comparative study of finfets versus 22nm bulk cmos. To get a sense for what engineers need to know about advanced nodes, finfets, and parasitic extraction, brian fuller, editor inchief at cadence, sat down with hitendra divecha, senior product marketing. Basis for a finfet is a lightly pdoped substrate with a hard mask on top e. Design and performance analysis of 1bit finfet full adder cells. It can be drawn as narrow as 16 nm with euv, with under 15 nm currently proven in. The arrival of the 20nm and finfet based 14nm and 16nm processes bring with them challenges for custom ic design. Physical design on tsmcs 16nm finfet for sdn einfochips. Finally reported good bulk finfet comparison to soi finfet in fact the bulk finfet pfet was better than the soi finfet. Thermal processing issues for 22nm node junction scaling. Collaborate to innovate finfet design ecosystem challenges.
Tsmc also introduced a more costeffective 16nm finfet compact technology 16ffc,which entered production in the second quarter of 2016. He is a senior editor for the ieee transactions on nanotechnology since. Finfet full adder cells for subthreshold region at 16 nm. This collaboration led to a lot of work at cadence on custom.
Digital integrated tool certification is complete for all major placeandroute tools at the 16nm. Moving from tsmc 28nm to tsmc 16nm finfet can be done easily. The olympussoc place and route system enables design closure with support for all 16nm finfet. A fin fieldeffect transistor finfet is a multigate device, a mosfet built on a substrate where. Finfets, 16nm and 14nm nodes, and parasitic extraction. As shown in section iv, adopting finfet technology may be even more. Having delivered multiple projects for the client, einfochips was chosen to work on its first 16nm finfet program based on capabilities and quality checklists. In section 4, we summarize all the challenges from the designers perspective. Globalfoundries leads with costsensitive manufacturing. Finfet doping options at 22nm, 1416nm and 10nm nodes. So weve gone through schematic design, simulation, layout, editing, physical verification, emi analysis and, finally, rc extraction. So were benefiting from all of their technology of development at this point in time. With finfets you can observe, on average, a performance improvement of 30% when moving from a 28nm planar to a 16nm or 14nm finfet process.
Tsmcs 12nm technology is more or less a marketing gimmick and is similar to its 16nm node. Introducing the finfet the finfet device has a different layout style than the mos device. With synopsys libraries, for example, when comparing. Characterizing electromigration effects in a 16nm finfet. Moving to 16nm, tsmc is planning 16 finfet and 16 finfet plus processes, and has said the first version will offer a 30 percent improvement in speed at the same power. Is finfet process the right choice for your next soc. Digital circuit design in the finfet era university of virginia. Physical design challenges and innovations to meet power. The mentor 16nm solutions are available now to support customers as they transition from test chips to full production 16nm finfet design efforts. Finfet layout is known to reduce the transistor raw radiation sensitivity by approximately an order of magnitude 26 28.
Construction of a finfet fundamentals semiconductor. The proposed counter was fabricated in 16nm finfet technology in hspice. The fins are formed in a highly anisotropic etch process. For rdf on trapezoidal bulk finfets under the fixed topfin width, we. It is increasingly important as finfet width discretization and multiple patterning mp have. Cell level soft error rate simulations of planar and. As a result, the processing cost for fdsoi is lower. Synopsys 2011 1 transition from planar mosfets to finfets and its impact on design and variability victor moroz. For the first time, we present a stateoftheart energyefficient 16nm technology integrated with finfet transistors, 0.
The 16nm finfet process compared to 20nm at tsmc provides about a 20% performance improvement at the same power, or a 40% power savings at the same performance, while the gate density is the same. Electrical characteristic fluctuation of 16nmgate trapezoidal bulk. In 20, sk hynix began commercial mass production of a 16 nm process, tsmc. Instead of a continuous channel, the finfet uses fins figure 6, which provide the same current at a smaller size. Transition from planar mosfets to finfets and its impact.950 445 939 1144 1203 1574 694 43 1247 1257 1658 1359 1261 34 110 1506 1138 1109 1253 312 344 1663 123 443 1338 410 612 1039 128 525 1142 286 1275 165 506 196